KHX18C10T2K2/8 specification sheet

Overview:

Kingston's KHX18C10T2K2/8 is a kit of two 512M x 64-bit (4GB) DDR3-1866 CL10 SDRAM (Synchronous DRAM) 1Rx8 memory modules, based on eight 512M x 8-bit DDR3 FBGA components per module. Each module kit supports Intel® XMP (Extreme Memory Profiles). Total kit capacity is 8GB. Each module kit has been tested to run at DDR3-1866 at a low latency timing of 10-11-10 at 1.5V. The SPDs are programmed to JEDEC standard latency DDR3-1600 timing of 11-11-11 at 1.5V. Each 240-pin DIMM uses gold contact fingers and requires +1.5V.

Features:

• JEDEC standard 1.5V (1.425V ~1.575V) Power Supply
• VDDQ = 1.5V (1.425V ~ 1.575V)
• 800MHz fCK for 1600Mb/sec/pin
• 8 independent internal bank
• Programmable CAS Latency: 11, 10, 9, 8, 7, 6
• Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
• 8-bit pre-fetch
• Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not
• allow seamless read or write [either on the fly using A12 or MRS]
• Bi-directional Differential Data Strobe
• Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
• On Die Termination using ODT pin
• Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C
• Asynchronous Reset
• PCB: Height 2.122” (53.90mm) w/ heatsink, single sided component

Specifications:

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Specifications
Product Code	KHX18C10T2K2/8
CL(IDD)	11 cycles
Row Cycle Time (tRCmin)	48.125ns (min.)
Refresh to Active/Refresh Command Time (tRFCmin)	260ns (min.)
Row Active Time (tRASmin)	35ns (min.)
Maximum Operating Power	3.480 W* (per module)
UL Rating	94 V - 0
Operating Temperature	0o C to 85o C
Storage Temperature	-55o C to +100o C